All MOSFET. LNF4N65 Datasheet

 

LNF4N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNF4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-262

 LNF4N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNF4N65 Datasheet (PDF)

 ..1. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf

LNF4N65 LNF4N65

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

 8.1. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf

LNF4N65 LNF4N65

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STU6025NL2

 

 
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