LNF7N65D Specs and Replacement
Type Designator: LNF7N65D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33.4 nS
Cossⓘ - Output Capacitance: 111 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-262
LNF7N65D substitution
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LNF7N65D datasheet
lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf
LNC7N65D LND7N65D LNG7N65D LNH7N65D LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo... See More ⇒
Detailed specifications: LNE12N60, LNE12N65, LNF10N60, LNF10N65, LNF12N60, LNF12N65, LNF4N60, LNF4N65, 20N60, XR46000ESETR, MC2539, MF5853CS, NP2301AMR-G, NP8205MR, LNG03R031, LNG045R055, LNG045R090
Keywords - LNF7N65D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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