LNF7N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: LNF7N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 33.4 nS
Cossⓘ - Output Capacitance: 111 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-262
LNF7N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNF7N65D Datasheet (PDF)
..1. Size:1097K lonten
lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf
lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf
LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
