All MOSFET. XR46000ESETR Datasheet

 

XR46000ESETR MOSFET. Datasheet pdf. Equivalent


   Type Designator: XR46000ESETR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SOT223

 XR46000ESETR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

XR46000ESETR Datasheet (PDF)

 ..1. Size:114K  maxlinear
 xr46000esetr.pdf

XR46000ESETR XR46000ESETR

XR46000 Product BriefN-Channel Power MOSFETDescriptionFEATURES The XR46000 is a silicon N-channel enhanced power MOSFET. Fast switchingWith low conduction loss, good switching performance and high ESD improved capabilityLow gate charge (Typ. 7.5nC)avalanche energy, it is suitable for various power supply system, Low reverse transfer capacitance

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