XR46000ESETR PDF and Equivalents Search

 

XR46000ESETR Specs and Replacement

Type Designator: XR46000ESETR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: SOT223

XR46000ESETR substitution

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XR46000ESETR datasheet

 ..1. Size:114K  maxlinear
 xr46000esetr.pdf pdf_icon

XR46000ESETR

XR46000 Product Brief N-Channel Power MOSFET Description FEATURES The XR46000 is a silicon N-channel enhanced power MOSFET. Fast switching With low conduction loss, good switching performance and high ESD improved capability Low gate charge (Typ. 7.5nC) avalanche energy, it is suitable for various power supply system, Low reverse transfer capacitance ... See More ⇒

Detailed specifications: LNE12N65, LNF10N60, LNF10N65, LNF12N60, LNF12N65, LNF4N60, LNF4N65, LNF7N65D, IRF540N, MC2539, MF5853CS, NP2301AMR-G, NP8205MR, LNG03R031, LNG045R055, LNG045R090, LNG045R140

Keywords - XR46000ESETR MOSFET specs

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