All MOSFET. XR46000ESETR Datasheet

 

XR46000ESETR Datasheet and Replacement


   Type Designator: XR46000ESETR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SOT223
 

 XR46000ESETR substitution

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XR46000ESETR Datasheet (PDF)

 ..1. Size:114K  maxlinear
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XR46000ESETR

XR46000 Product BriefN-Channel Power MOSFETDescriptionFEATURES The XR46000 is a silicon N-channel enhanced power MOSFET. Fast switchingWith low conduction loss, good switching performance and high ESD improved capabilityLow gate charge (Typ. 7.5nC)avalanche energy, it is suitable for various power supply system, Low reverse transfer capacitance

Datasheet: LNE12N65 , LNF10N60 , LNF10N65 , LNF12N60 , LNF12N65 , LNF4N60 , LNF4N65 , LNF7N65D , IRF540 , MC2539 , MF5853CS , NP2301AMR-G , NP8205MR , LNG03R031 , LNG045R055 , LNG045R090 , LNG045R140 .

History: IRFS3307 | KF13N50P | IRFHM4231 | IRFS3307Z

Keywords - XR46000ESETR MOSFET datasheet

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