MC2539 Datasheet and Replacement
Type Designator: MC2539
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN2X2
MC2539 substitution
MC2539 Datasheet (PDF)
mc2539.pdf

MC2539 -25V -1A PNP Low VCEsat Transistor with N-channeI Trench MOSFET GeneraI Description FeaturesCombination of PNP low VCEsat Breakthrough In Small Low collector-emitter saturation voltage VCEsatSignal transistor and N-channel Trench MOSFET.The High collector current capability IC and ICMdevice is housed in a leadless medium power DFN2X2 High collector current gain (hFE) at hi
Datasheet: LNF10N60 , LNF10N65 , LNF12N60 , LNF12N65 , LNF4N60 , LNF4N65 , LNF7N65D , XR46000ESETR , IRF540N , MF5853CS , NP2301AMR-G , NP8205MR , LNG03R031 , LNG045R055 , LNG045R090 , LNG045R140 , LNG045R210 .
History: ISCNH379P | AM7367P | STD20NF06LT4 | IRHM57064 | CS40N06 | 2SK2442 | AOD2910
Keywords - MC2539 MOSFET datasheet
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History: ISCNH379P | AM7367P | STD20NF06LT4 | IRHM57064 | CS40N06 | 2SK2442 | AOD2910



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