MC2539 Specs and Replacement
Type Designator: MC2539
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN2X2
MC2539 substitution
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MC2539 datasheet
mc2539.pdf
MC2539 -25V -1A PNP Low VCEsat Transistor with N-channeI Trench MOSFET GeneraI Description Features Combination of PNP low VCEsat Breakthrough In Small Low collector-emitter saturation voltage VCEsat Signal transistor and N-channel Trench MOSFET.The High collector current capability IC and ICM device is housed in a leadless medium power DFN2X2 High collector current gain (hFE) at hi... See More ⇒
Detailed specifications: LNF10N60, LNF10N65, LNF12N60, LNF12N65, LNF4N60, LNF4N65, LNF7N65D, XR46000ESETR, IRF540, MF5853CS, NP2301AMR-G, NP8205MR, LNG03R031, LNG045R055, LNG045R090, LNG045R140, LNG045R210
Keywords - MC2539 MOSFET specs
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