MF5853CS Specs and Replacement
Type Designator: MF5853CS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: DFN2X3
MF5853CS substitution
- MOSFET ⓘ Cross-Reference Search
MF5853CS datasheet
mf5853cs.pdf
MF5853CS P-ChanneI 20V (D-S MOSFET With Schottky Diode GeneraI Description Features This miniature surface mount MOSFET uses advanced VDS (V) 20V MOSFET ID(A) 3 9A VGS 4 5V Trench process,low RDS(ON) assures minimal power RDS on 110 m @ VGS = 4 5V loss energy conversion which makes this and device RDS on 145 m @ VGS = 2 5V ideal f or... See More ⇒
Detailed specifications: LNF10N65, LNF12N60, LNF12N65, LNF4N60, LNF4N65, LNF7N65D, XR46000ESETR, MC2539, 50N06, NP2301AMR-G, NP8205MR, LNG03R031, LNG045R055, LNG045R090, LNG045R140, LNG045R210, LNG04R035B
Keywords - MF5853CS MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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