All MOSFET. NP2301AMR-G Datasheet

 

NP2301AMR-G Datasheet and Replacement


   Type Designator: NP2301AMR-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT23
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NP2301AMR-G Datasheet (PDF)

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NP2301AMR-G

NP2301A P-Channel Enhancement Mode MOSFETDescription Schematic diagram The NP2301A uses advanced trench technology Sto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM Gapplications. General Features D VDS =-20VID =-2.8A Marking and pin assignment RDS(ON)(Typ.)=7

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History: SI2311DS | HLML6401 | SPA12N50C3 | STD10N60M2 | AUIRFS3006 | RF1S45N06LESM | AP85T03GH-HF

Keywords - NP2301AMR-G MOSFET datasheet

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