All MOSFET. NP2301AMR-G Datasheet

 

NP2301AMR-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP2301AMR-G
   Marking Code: 23AL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.1 nC
   trⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT23

 NP2301AMR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP2301AMR-G Datasheet (PDF)

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 np2301amr-g.pdf

NP2301AMR-G NP2301AMR-G

NP2301A P-Channel Enhancement Mode MOSFETDescription Schematic diagram The NP2301A uses advanced trench technology Sto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM Gapplications. General Features D VDS =-20VID =-2.8A Marking and pin assignment RDS(ON)(Typ.)=7

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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