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NP2301AMR-G Specs and Replacement


   Type Designator: NP2301AMR-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT23
 

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NP2301AMR-G datasheet

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NP2301AMR-G

NP2301A P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2301A uses advanced trench technology S to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM G applications. General Features D VDS =-20V ID =-2.8A Marking and pin assignment RDS(ON)(Typ.)=7... See More ⇒

Detailed specifications: LNF12N60 , LNF12N65 , LNF4N60 , LNF4N65 , LNF7N65D , XR46000ESETR , MC2539 , MF5853CS , IRFP460 , NP8205MR , LNG03R031 , LNG045R055 , LNG045R090 , LNG045R140 , LNG045R210 , LNG04R035B , LNG04R050 .

History: PSMN005-55B

Keywords - NP2301AMR-G MOSFET specs

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