LNG03R031 PDF and Equivalents Search

 

LNG03R031 Specs and Replacement

Type Designator: LNG03R031

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO-252

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LNG03R031 datasheet

 ..1. Size:799K  lonten
 lng03r031 lnh03r031.pdf pdf_icon

LNG03R031

LNG03R031/ LNH03R031 Lonten N-channel 30V, 120A, 3.1m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.1m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stan... See More ⇒

Detailed specifications: LNF4N60, LNF4N65, LNF7N65D, XR46000ESETR, MC2539, MF5853CS, NP2301AMR-G, NP8205MR, IRF640, LNG045R055, LNG045R090, LNG045R140, LNG045R210, LNG04R035B, LNG04R050, LNG04R075, LNG04R120

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