LNG5N50 MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

LNG5N50 Specs and Replacement

   Type Designator: LNG5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 80.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-252

LNG5N50 substitution

- MOSFET ⓘ Cross-Reference Search

LNG5N50 datasheet

..1. Size:1205K lonten
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒

9.1. Size:1292K lonten
lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf pdf_icon

LNC5N65B LND5N65B LNG5N65B LNH5N65B Lonten N-channel 650V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 2.1 DS(on),max superior switching performance and high avalanche Q 14.5 nC g,typ energy. Features Low R DS(on) Low gate ch... See More ⇒

Detailed specifications: LNG06R230 , LNG06R310 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 , LNG4N65 , LNG4N80 , K3569 , LNG5N65B , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 .