LNL04R120 MOSFET Datasheet: N-Ch, 40V, 12A. Full specification with pinout and replacement list

LNL04R120 Specs and Replacement

Type Designator: LNL04R120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

LNL04R120 substitution

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LNL04R120 datasheet

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LNL04R120 Lonten N-channel 40V, 12A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 12m GS technology. This advanced technology has been I 12A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p... See More ⇒

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LNL04R075 Lonten N-channel 40V, 18A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 18A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

Detailed specifications: LNH4N60, LNH4N65, LNH4N80, LNH5N50, LNH5N65B, LNH7N60D, LNH7N65D, LNL04R075, IRFZ24N, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, LNSC2302