All MOSFET. LNND04R120 Datasheet

 

LNND04R120 Datasheet and Replacement


   Type Designator: LNND04R120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3
 

 LNND04R120 substitution

   - MOSFET ⓘ Cross-Reference Search

 

LNND04R120 Datasheet (PDF)

 ..1. Size:768K  lonten
 lnnd04r120.pdf pdf_icon

LNND04R120

LNND04R120Lonten N-channel 40V, 20A, 12m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 12mGStechnology. This advanced technology has been I 20ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

Datasheet: LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , IRF730 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 .

History: CSD17313Q2 | RU1HC2H | BL7N65B-U | 6N60KG-TA3-T | AP4232BGM-HF | NCEP6016AS | YJD45P03A

Keywords - LNND04R120 MOSFET datasheet

 LNND04R120 cross reference
 LNND04R120 equivalent finder
 LNND04R120 lookup
 LNND04R120 substitution
 LNND04R120 replacement

 

 
Back to Top

 


 
.