LNND04R120 PDF and Equivalents Search

 

LNND04R120 Specs and Replacement

Type Designator: LNND04R120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 149 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3X3

LNND04R120 substitution

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LNND04R120 datasheet

 ..1. Size:768K  lonten
 lnnd04r120.pdf pdf_icon

LNND04R120

LNND04R120 Lonten N-channel 40V, 20A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 12m GS technology. This advanced technology has been I 20A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

Detailed specifications: LNH7N65D, LNL04R075, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, IRFB31N20D, LNSA3400, LNSC2302, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487, LPSC2301

Keywords - LNND04R120 MOSFET specs

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