LNND04R120 Datasheet and Replacement
Type Designator: LNND04R120
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 149 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3X3
LNND04R120 substitution
LNND04R120 Datasheet (PDF)
lnnd04r120.pdf

LNND04R120Lonten N-channel 40V, 20A, 12m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 12mGStechnology. This advanced technology has been I 20ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy
Datasheet: LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , IRFZ46N , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 .
History: LNN06R140
Keywords - LNND04R120 MOSFET datasheet
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History: LNN06R140



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