All MOSFET. LPL4459 Datasheet

 

LPL4459 Datasheet and Replacement


   Type Designator: LPL4459
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33.2 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOP-8
 

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LPL4459 Datasheet (PDF)

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LPL4459

LPL4459 Lonten P-channel -30V, -6.5A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been ID -6.5A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

Datasheet: LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , RU7088R , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT , LSB55R140GF .

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