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LPL4459 Specs and Replacement

Type Designator: LPL4459

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.2 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOP-8

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LPL4459 datasheet

 ..1. Size:640K  lonten
 lpl4459.pdf pdf_icon

LPL4459

LPL4459 Lonten P-channel -30V, -6.5A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field V DSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been I D -6.5A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand ... See More ⇒

Detailed specifications: LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, LNSC2302, LNSC3400, LNU2N65, IRFZ46N, LPSA3481, LPSA3487, LPSC2301, LPSC3481, LPSC3487, LSB55R050GT, LSB55R066GT, LSB55R140GF

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