LPL4459 MOSFET. Datasheet pdf. Equivalent
Type Designator: LPL4459
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.6 nC
trⓘ - Rise Time: 33.2 nS
Cossⓘ - Output Capacitance: 103 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOP-8
LPL4459 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LPL4459 Datasheet (PDF)
..1. Size:640K lonten
lpl4459.pdf
lpl4459.pdf
LPL4459 Lonten P-channel -30V, -6.5A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been ID -6.5A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
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