All MOSFET. LPSA3487 Datasheet

 

LPSA3487 Datasheet and Replacement


   Type Designator: LPSA3487
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31.1 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT-23
 

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LPSA3487 Datasheet (PDF)

 ..1. Size:633K  lonten
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LPSA3487

LPSA3487 Lonten P-channel -30V, -4.3A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been ID -4.3A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:645K  lonten
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LPSA3487

LPSA3481 Lonten P-channel -30V, -4.0A, 50m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 50m technology. This advanced technology has been ID -4.0A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

Datasheet: LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , 60N06 , LPSC2301 , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT , LSB55R140GF , LSB55R140GT , LSB60R030HT .

History: VSE003N04MSC-G | UPA1764G | 6N60KG-TA3-T | AOU3N50 | DMTH4007LPS | TPV65R170M | 2N7002ESEGP

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