All MOSFET. LPSC3481 Datasheet

 

LPSC3481 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LPSC3481
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.3 nC
   trⓘ - Rise Time: 30.2 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23

 LPSC3481 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LPSC3481 Datasheet (PDF)

 ..1. Size:658K  lonten
 lpsc3481.pdf

LPSC3481 LPSC3481

LPSC3481 Lonten P-channel -30V, -4.0A, 50m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 50m technology. This advanced technology has been ID -4.0A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:633K  lonten
 lpsc3487.pdf

LPSC3481 LPSC3481

LPSC3487 Lonten P-channel -30V, -4.3A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been ID -4.3A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top