LPSC3481 PDF and Equivalents Search

 

LPSC3481 Specs and Replacement

Type Designator: LPSC3481

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.2 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-23

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LPSC3481 datasheet

 ..1. Size:658K  lonten
 lpsc3481.pdf pdf_icon

LPSC3481

LPSC3481 Lonten P-channel -30V, -4.0A, 50m Power MOSFET Description Product Summary These P-Channel enhancement mode power field V DSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 50m technology. This advanced technology has been I D -4.0A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒

 7.1. Size:633K  lonten
 lpsc3487.pdf pdf_icon

LPSC3481

LPSC3487 Lonten P-channel -30V, -4.3A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field V DSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been I D -4.3A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒

Detailed specifications: LNSA3400, LNSC2302, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487, LPSC2301, IRFB7545, LPSC3487, LSB55R050GT, LSB55R066GT, LSB55R140GF, LSB55R140GT, LSB60R030HT, LSB60R039GT, LSB60R066GT

Keywords - LPSC3481 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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