LSB80R350GT Specs and Replacement
Type Designator: LSB80R350GT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-247
LSB80R350GT substitution
- MOSFET ⓘ Cross-Reference Search
LSB80R350GT datasheet
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf
LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT LonFET Lonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The R 0.35 DS(on),max resulting device has extremely low on resistance, I 45A DM making it especially suitable for applications which ... See More ⇒
Detailed specifications: LSB65R070GF, LSB65R099GF, LSB65R099GT, LSB65R125HT, LSB65R180GF, LSB65R180GT, LSB65R180HT, LSB65R380HT, IRFB4227, LSC55R140GF, LSC55R140GT, LSC60R105HF, LSC60R125HT, LSC60R180HT, LSC60R280HT, LSC60R290HF, LSC60R650HT
Keywords - LSB80R350GT MOSFET specs
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