LSB80R350GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSB80R350GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-247
LSB80R350GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSB80R350GT Datasheet (PDF)
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which
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