All MOSFET. LSB80R350GT Datasheet

 

LSB80R350GT Datasheet and Replacement


   Type Designator: LSB80R350GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-247
 

 LSB80R350GT substitution

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LSB80R350GT Datasheet (PDF)

 ..1. Size:1197K  lonten
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LSB80R350GT

LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which

Datasheet: LSB65R070GF , LSB65R099GF , LSB65R099GT , LSB65R125HT , LSB65R180GF , LSB65R180GT , LSB65R180HT , LSB65R380HT , AON6414A , LSC55R140GF , LSC55R140GT , LSC60R105HF , LSC60R125HT , LSC60R180HT , LSC60R280HT , LSC60R290HF , LSC60R650HT .

History: MTN2510H8 | TPM3139K | BUK9MJJ-65PLL | IRF610SPBF | ELM53406CA | HGI120N06SL | HY1603S

Keywords - LSB80R350GT MOSFET datasheet

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