All MOSFET. LSD50R160HT Datasheet

 

LSD50R160HT Datasheet and Replacement


   Type Designator: LSD50R160HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.5 nS
   Cossⓘ - Output Capacitance: 46.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-220F
 

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LSD50R160HT Datasheet (PDF)

 ..1. Size:1107K  lonten
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LSD50R160HT

LSD50R160HT/LSG50R160HT/LSH50R160HT/LSF50R160HT/LSE50R160HTLonFETLonten N-channel 500V, 20A, 0.16 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 550VDS j,maxadvanced super junction technology. The resulting R 0.16DS(on),maxdevice has extremely low on resistance, making it I 60ADMespecially suitable for applications which r

Datasheet: LSC65R380HT , LSC65R570GT , LSC65R650HT , LSC70R380GT , LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , IRFB3607 , LSD55R066GT , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF .

History: IRF2807PBF

Keywords - LSD50R160HT MOSFET datasheet

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