LSD50R160HT Specs and Replacement
Type Designator: LSD50R160HT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34.5 nS
Cossⓘ - Output Capacitance: 46.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-220F
LSD50R160HT substitution
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LSD50R160HT datasheet
lsd50r160ht lsg50r160ht lsh50r160ht lsf50r160ht lse50r160ht.pdf
LSD50R160HT/LSG50R160HT/LSH50R160HT/LSF50R160HT/LSE50R160HT LonFET Lonten N-channel 500V, 20A, 0.16 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 550V DS j,max advanced super junction technology. The resulting R 0.16 DS(on),max device has extremely low on resistance, making it I 60A DM especially suitable for applications which r... See More ⇒
Detailed specifications: LSC65R380HT, LSC65R570GT, LSC65R650HT, LSC70R380GT, LSC70R640GT, LSC80R350GT, LSC80R680GT, LSC80R980GT, K4145, LSD55R066GT, LSD55R140GF, LSD55R140GT, LSD60R070HT, LSD60R092GF, LSD60R092GT, LSD60R099HT, LSD60R105HF
Keywords - LSD50R160HT MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPW60R080P7 | LSD65R180HT | IPW60R070CFD7 | 7409 | IRFH8337 | LSD65R180GT | LSC80R680GT
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