STP20N10 Specs and Replacement
Type Designator: STP20N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220
STP20N10 substitution
- MOSFET ⓘ Cross-Reference Search
STP20N10 datasheet
stp20n10.pdf
STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10 100 V ... See More ⇒
stp20n10l.pdf
STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10L 100 V ... See More ⇒
stp20n10-.pdf
STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP20N10 100 V ... See More ⇒
stp20n10l.pdf
isc N-Channel MOSFET Transistor STP20N10L FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: STP18N10 , STP18N10FI , STP19N06 , STP19N06FI , STP19N06L , STP19N06LFI , STP20N06 , STP20N06FI , 5N65 , STP20N10FI , STP20N10L , STP20N10LFI , STP21N05L , STP21N05LFI , STP21N06L , STP21N06LFI , STP25N05 .
History: STP19N06LFI
Keywords - STP20N10 MOSFET specs
STP20N10 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STP19N06LFI
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