All MOSFET. STP20N10 Datasheet

 

STP20N10 Datasheet and Replacement


   Type Designator: STP20N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220
 

 STP20N10 substitution

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STP20N10 Datasheet (PDF)

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STP20N10

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V

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STP20N10

STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V

 0.2. Size:140K  st
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STP20N10

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V

 0.3. Size:260K  inchange semiconductor
 stp20n10l.pdf pdf_icon

STP20N10

isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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Keywords - STP20N10 MOSFET datasheet

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