LSDN55R140GT Specs and Replacement
Type Designator: LSDN55R140GT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 76.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-220NF
LSDN55R140GT substitution
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LSDN55R140GT datasheet
lsdn55r140gt.pdf
LSDN55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which require Q 40nC g,typ superior power density an... See More ⇒
Detailed specifications: LSD70R1KGT, LSD70R380GT, LSD70R450GT, LSD70R640GT, LSD80R2K8GT, LSD80R350GT, LSD80R680GT, LSD80R980GT, IRF830, LSDN60R950HT, LSDN65R380GT, LSDN65R380HT, LSDN65R650HT, LSDN65R950HT, LSE50R160HT, LSE55R066GT, LSE55R140GF
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: NCEP6080AG | MDS1528URH | LSE65R280HT | LNSC2302
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