All MOSFET. LSDN55R140GT Datasheet

 

LSDN55R140GT Datasheet and Replacement


   Type Designator: LSDN55R140GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 76.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-220NF
 

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LSDN55R140GT Datasheet (PDF)

 ..1. Size:1088K  lonten
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LSDN55R140GT

LSDN55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsuperior power density an

Datasheet: LSD70R1KGT , LSD70R380GT , LSD70R450GT , LSD70R640GT , LSD80R2K8GT , LSD80R350GT , LSD80R680GT , LSD80R980GT , P0903BDG , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT , LSDN65R950HT , LSE50R160HT , LSE55R066GT , LSE55R140GF .

History: BSS159N | 2SK3985-01 | TPHR9003NL | SM6127NSK | RU40S4H | SI12N60

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