STP20N10LFI Datasheet and Replacement
Type Designator: STP20N10LFI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: ISOWATT220
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STP20N10LFI Datasheet (PDF)
stp20n10l.pdf
STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V
stp20n10l.pdf
isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
stp20n10.pdf
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V
stp20n10-.pdf
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V
Datasheet: STP19N06FI , STP19N06L , STP19N06LFI , STP20N06 , STP20N06FI , STP20N10 , STP20N10FI , STP20N10L , P60NF06 , STP21N05L , STP21N05LFI , STP21N06L , STP21N06LFI , STP25N05 , STP25N05FI , STP25N06 , STP25N06FI .
History: IPA50R140CP | CS12N60FA9H | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003
Keywords - STP20N10LFI MOSFET datasheet
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History: IPA50R140CP | CS12N60FA9H | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003
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