STP20N10LFI Datasheet and Replacement
Type Designator: STP20N10LFI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 22 nC
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: ISOWATT220
STP20N10LFI substitution
STP20N10LFI Datasheet (PDF)
stp20n10l.pdf
STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V
stp20n10l.pdf
isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
stp20n10.pdf
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V
stp20n10-.pdf
STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: APT1201R5BVR | APT10M11JVR
Keywords - STP20N10LFI MOSFET datasheet
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History: APT1201R5BVR | APT10M11JVR
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