LSGD10R080W3 Specs and Replacement
Type Designator: LSGD10R080W3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 453 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220F
LSGD10R080W3 substitution
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LSGD10R080W3 datasheet
lsgc10r080w3 lsgd10r080w3 lsge10r080w3.pdf
LSGC10R080W3/LSGD10R080W3/LSGE10R080W3 Lonten N-channel 100V, 80A, 8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching perform... See More ⇒
Detailed specifications: LSGC04R029, LSGC04R035, LSGC06R034W3, LSGC085R041W3, LSGC085R065W3, LSGC10R080W3, LSGC15R085W3, LSGD04R035, IRLB3034, LSGE04R035, LSGE06R034W3, LSGE085R041W3, LSGE085R065W3, LSGE10R080W3, LSGE15R085W3, LSGG03R020, LSGG04R028
Keywords - LSGD10R080W3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SSF80R240SFD | LSGE15R085W3
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