All MOSFET. LSGD10R080W3 Datasheet

 

LSGD10R080W3 Datasheet and Replacement


   Type Designator: LSGD10R080W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220F
 

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LSGD10R080W3 Datasheet (PDF)

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LSGD10R080W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

Datasheet: LSGC04R029 , LSGC04R035 , LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 , LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 , EMB04N03H , LSGE04R035 , LSGE06R034W3 , LSGE085R041W3 , LSGE085R065W3 , LSGE10R080W3 , LSGE15R085W3 , LSGG03R020 , LSGG04R028 .

History: PSMN3R4-30BLE | WST2066 | STP75NF20 | PNMTOF600V8 | YJL2102W | SSP50R140SFD | STB30NM60ND

Keywords - LSGD10R080W3 MOSFET datasheet

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