All MOSFET. LSGD10R080W3 Datasheet

 

LSGD10R080W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSGD10R080W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220F

 LSGD10R080W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSGD10R080W3 Datasheet (PDF)

 ..1. Size:912K  lonten
 lsgc10r080w3 lsgd10r080w3 lsge10r080w3.pdf

LSGD10R080W3 LSGD10R080W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

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