All MOSFET. LSGE15R085W3 Datasheet

 

LSGE15R085W3 Datasheet and Replacement


   Type Designator: LSGE15R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 512 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-263
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LSGE15R085W3 Datasheet (PDF)

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LSGE15R085W3

LSGC15R085W3\LSGE15R085W3Lonten N-channel 150V, 120A, 8.5m Power MOSFETFeatures Product Summarym 150V,120 A,R =8.5 @ V =10VDS(ON).max GS VDS 150V Improved dv/dt capabilityRDS(on) 7m Fast switchingID 120A 100% EAS Guaranteed Green device availableApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche

 9.1. Size:912K  lonten
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LSGE15R085W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOI508 | HM4485A | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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