All MOSFET. LSGE15R085W3 Datasheet

 

LSGE15R085W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSGE15R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 512 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-263

 LSGE15R085W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSGE15R085W3 Datasheet (PDF)

 ..1. Size:797K  lonten
 lsgc15r085w3 lsge15r085w3.pdf

LSGE15R085W3 LSGE15R085W3

LSGC15R085W3\LSGE15R085W3Lonten N-channel 150V, 120A, 8.5m Power MOSFETFeatures Product Summarym 150V,120 A,R =8.5 @ V =10VDS(ON).max GS VDS 150V Improved dv/dt capabilityRDS(on) 7m Fast switchingID 120A 100% EAS Guaranteed Green device availableApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche

 9.1. Size:912K  lonten
 lsgc10r080w3 lsgd10r080w3 lsge10r080w3.pdf

LSGE15R085W3 LSGE15R085W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

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History: AP9435GM | IRL3103L | MX2N4857 | MTW32N20E | BUZ332A | NCE0117K

 

 
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