LSGE15R085W3 PDF and Equivalents Search

 

LSGE15R085W3 Specs and Replacement

Type Designator: LSGE15R085W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 107 nS

Cossⓘ - Output Capacitance: 512 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-263

LSGE15R085W3 substitution

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LSGE15R085W3 datasheet

 ..1. Size:797K  lonten
 lsgc15r085w3 lsge15r085w3.pdf pdf_icon

LSGE15R085W3

LSGC15R085W3 LSGE15R085W3 Lonten N-channel 150V, 120A, 8.5m Power MOSFET Features Product Summary m 150V,120 A,R =8.5 @ V =10V DS(ON).max GS VDS 150V Improved dv/dt capability RDS(on) 7m Fast switching I D 120A 100% EAS Guaranteed Green device available Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche... See More ⇒

 9.1. Size:912K  lonten
 lsgc10r080w3 lsgd10r080w3 lsge10r080w3.pdf pdf_icon

LSGE15R085W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3 Lonten N-channel 100V, 80A, 8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching perform... See More ⇒

Detailed specifications: LSGC15R085W3, LSGD04R035, LSGD10R080W3, LSGE04R035, LSGE06R034W3, LSGE085R041W3, LSGE085R065W3, LSGE10R080W3, RU7088R, LSGG03R020, LSGG04R028, LSGG04R029, LSGG04R035, LSGG06R034W3, LSGG06R098W3, LSGG08R060W3, LSGG10R085W3

Keywords - LSGE15R085W3 MOSFET specs

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