All MOSFET. LSGH10R085W3 Datasheet

 

LSGH10R085W3 Datasheet and Replacement


   Type Designator: LSGH10R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-251
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LSGH10R085W3 Datasheet (PDF)

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LSGH10R085W3

LSGG10R085W3\LSGH10R085W3Lonten N-channel 100V, 65A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 8.5mtechnology. This advanced technology has been I 65ADespecially tailored to minimize on-state resistance,provide superior switching performance,

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTA18P10T | DMNH10H028SCT | WML11N80M3 | SSM6K34TU | PMG370XN | KP809G1 | IRLS4030

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