LSGH10R085W3 PDF and Equivalents Search

 

LSGH10R085W3 Specs and Replacement

Type Designator: LSGH10R085W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-251

LSGH10R085W3 substitution

- MOSFET ⓘ Cross-Reference Search

 

LSGH10R085W3 datasheet

 ..1. Size:795K  lonten
 lsgg10r085w3 lsgh10r085w3.pdf pdf_icon

LSGH10R085W3

LSGG10R085W3 LSGH10R085W3 Lonten N-channel 100V, 65A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 8.5m technology. This advanced technology has been I 65A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒

Detailed specifications: LSGG06R034W3, LSGG06R098W3, LSGG08R060W3, LSGG10R085W3, LSGH04R028, LSGH04R029, LSGH04R035, LSGH08R060W3, IRF540N, LSGN03R020, LSGN04R025, LSGN04R029, LSGN04R035, LSGN06R034W3, LSGN06R098W3, LSGN085R065W3, LSGN10R085W3

Keywords - LSGH10R085W3 MOSFET specs

 LSGH10R085W3 cross reference

 LSGH10R085W3 equivalent finder

 LSGH10R085W3 pdf lookup

 LSGH10R085W3 substitution

 LSGH10R085W3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.