All MOSFET. LSGH10R085W3 Datasheet

 

LSGH10R085W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSGH10R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-251

 LSGH10R085W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSGH10R085W3 Datasheet (PDF)

 ..1. Size:795K  lonten
 lsgg10r085w3 lsgh10r085w3.pdf

LSGH10R085W3 LSGH10R085W3

LSGG10R085W3\LSGH10R085W3Lonten N-channel 100V, 65A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 8.5mtechnology. This advanced technology has been I 65ADespecially tailored to minimize on-state resistance,provide superior switching performance,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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