LSGH10R085W3 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGH10R085W3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 453 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-251
LSGH10R085W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGH10R085W3 Datasheet (PDF)
..1. Size:795K lonten
lsgg10r085w3 lsgh10r085w3.pdf
lsgg10r085w3 lsgh10r085w3.pdf
LSGG10R085W3\LSGH10R085W3Lonten N-channel 100V, 65A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 8.5mtechnology. This advanced technology has been I 65ADespecially tailored to minimize on-state resistance,provide superior switching performance,
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
