All MOSFET. LSGN10R085W3 Datasheet

 

LSGN10R085W3 Datasheet and Replacement


   Type Designator: LSGN10R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PPAK5X6
 

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LSGN10R085W3 Datasheet (PDF)

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LSGN10R085W3

LSGN10R085W3Lonten N-channel 100V, 60A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withs

 ..2. Size:856K  lonten
lsgn10r085w3.pdf pdf_icon

LSGN10R085W3

LSGN10R085W3Lonten N-channel 100V, 60A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withs

Datasheet: LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , LSGN06R098W3 , LSGN085R065W3 , IRF640N , LSH50R160HT , LSH60R1K4HT , LSH60R240HT , LSH60R280HT , LSH60R290HF , LSH60R2K5HT , LSH60R380HT , LSH60R650HT .

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