LSGN10R085W3 PDF and Equivalents Search

 

LSGN10R085W3 Specs and Replacement

Type Designator: LSGN10R085W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PPAK5X6

LSGN10R085W3 substitution

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LSGN10R085W3 datasheet

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 lsgn10r085w3.pdf pdf_icon

LSGN10R085W3

LSGN10R085W3 Lonten N-channel 100V, 60A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 8.5m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with s... See More ⇒

 ..2. Size:856K  lonten
 lsgn10r085w3.pdf pdf_icon

LSGN10R085W3

LSGN10R085W3 Lonten N-channel 100V, 60A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 8.5m GS technology. This advanced technology has been I 60A D especially tailored to minimize on-state resistance, provide superior switching performance, and with s... See More ⇒

Detailed specifications: LSGH10R085W3, LSGN03R020, LSGN04R025, LSGN04R029, LSGN04R035, LSGN06R034W3, LSGN06R098W3, LSGN085R065W3, IRFB4110, LSH50R160HT, LSH60R1K4HT, LSH60R240HT, LSH60R280HT, LSH60R290HF, LSH60R2K5HT, LSH60R380HT, LSH60R650HT

Keywords - LSGN10R085W3 MOSFET specs

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