LSGN10R085W3 Datasheet and Replacement
Type Designator: LSGN10R085W3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 453 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PPAK5X6
LSGN10R085W3 substitution
LSGN10R085W3 Datasheet (PDF)
lsgn10r085w3.pdf
LSGN10R085W3Lonten N-channel 100V, 60A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withs
lsgn10r085w3.pdf
LSGN10R085W3Lonten N-channel 100V, 60A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withs
Datasheet: LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , LSGN06R098W3 , LSGN085R065W3 , IRFB4110 , LSH50R160HT , LSH60R1K4HT , LSH60R240HT , LSH60R280HT , LSH60R290HF , LSH60R2K5HT , LSH60R380HT , LSH60R650HT .
History: IPI076N15N5 | JMSH0406PU | 2SJ603-S | 2SK345 | SK860316 | SK860317 | MIC94031BM4TR
Keywords - LSGN10R085W3 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IPI076N15N5 | JMSH0406PU | 2SJ603-S | 2SK345 | SK860316 | SK860317 | MIC94031BM4TR
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