AO4812-MS Datasheet and Replacement
Type Designator: AO4812-MS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
AO4812-MS Datasheet (PDF)
ao4812-ms.pdf

www.msksemi.comAO4812-MSSemiconductor CompianceD1ProductD1D2SummaryD230VVDSI (at V =10V) 6AD GSS1G1R (at V =10V)
ao4812.pdf

AO481230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4812 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)
ao4812.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4812 (KO4812)SOP-8 Unit:mm Features VDS (V) = 30V ID = 6A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-So
ao4812.pdf

AO4812www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - AO4812-MS MOSFET datasheet
AO4812-MS cross reference
AO4812-MS equivalent finder
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AO4812-MS replacement
History: MCH3484 | DMN30H4D0L



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