AO4812-MS - аналоги, параметры транзистора - Справочник транзисторов

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www.msksemi.com AO4812-MS Semiconductor Compiance D1 Product D1 D2 Summary D2 30V VDS I (at V =10V) 6A D GS S1 G1 R (at V =10V)

8.1. Size:255K aosemi
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AO4812 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

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SMD Type MOSFET Dual N-Channel MOSFET AO4812 (KO4812) SOP-8 Unit mm Features VDS (V) = 30V ID = 6A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-So

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AO4812 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L

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