MEM4N60THG PDF and Equivalents Search

 

MEM4N60THG Specs and Replacement

Type Designator: MEM4N60THG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.2 nS

Cossⓘ - Output Capacitance: 92.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO251

MEM4N60THG substitution

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MEM4N60THG datasheet

 ..1. Size:722K  microne
 mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf pdf_icon

MEM4N60THG

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V 4A Switching regulator application. RDS(ON)=2.3 @VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25 ) P... See More ⇒

Detailed specifications: MEM2307M3G, MEM2307XG, MEM2309S, MEM2310M3, MEM2310X, MEM2313, MEM2402, MEM4N60THDG, 2N60, MEM4N60K3G, MEM4N60A3G, MIC94052, MIC94053, TN0106, TN0110, TN0604, TN0702

Keywords - MEM4N60THG MOSFET specs

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