All MOSFET. MEM4N60THG Datasheet

 

MEM4N60THG Datasheet and Replacement


   Type Designator: MEM4N60THG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 92.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO251
 

 MEM4N60THG substitution

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MEM4N60THG Datasheet (PDF)

 ..1. Size:722K  microne
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MEM4N60THG

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V4A Switching regulator application. RDS(ON)=2.3@VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25) P

Datasheet: MEM2307M3G , MEM2307XG , MEM2309S , MEM2310M3 , MEM2310X , MEM2313 , MEM2402 , MEM4N60THDG , IRF830 , MEM4N60K3G , MEM4N60A3G , MIC94052 , MIC94053 , TN0106 , TN0110 , TN0604 , TN0702 .

History: SWNC4N70D1 | BSC0702LS

Keywords - MEM4N60THG MOSFET datasheet

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