All MOSFET. MEM4N60THG Datasheet

 

MEM4N60THG MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEM4N60THG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.6 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 92.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO251

 MEM4N60THG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEM4N60THG Datasheet (PDF)

 ..1. Size:722K  microne
 mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf

MEM4N60THG MEM4N60THG

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V4A Switching regulator application. RDS(ON)=2.3@VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25) P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HFS10N60U

 

 
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