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TN0110 Specs and Replacement

Type Designator: TN0110

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO92

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TN0110 datasheet

 ..1. Size:607K  supertex
 tn0110.pdf pdf_icon

TN0110

Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertex s Low input capacitance - 50pF typical well-proven, silicon-gate manufacturing process. This Fast switching speeds c... See More ⇒

Detailed specifications: MEM2402, MEM4N60THDG, MEM4N60THG, MEM4N60K3G, MEM4N60A3G, MIC94052, MIC94053, TN0106, STP65NF06, TN0604, TN0702, TN2106K1-G, TN2106N3-G, TN2524, TP2104K1, TP2104N3, TP2435

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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