All MOSFET. TN0110 Datasheet

 

TN0110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TN0110
   Marking Code: 0110'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO92

 TN0110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TN0110 Datasheet (PDF)

 ..1. Size:607K  supertex
 tn0110.pdf

TN0110 TN0110

Supertex inc. TN0110N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertexs Low input capacitance - 50pF typical well-proven, silicon-gate manufacturing process. This Fast switching speeds c

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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