All MOSFET. TN0110 Datasheet

 

TN0110 Datasheet and Replacement


   Type Designator: TN0110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO92
 

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TN0110 Datasheet (PDF)

 ..1. Size:607K  supertex
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TN0110

Supertex inc. TN0110N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertexs Low input capacitance - 50pF typical well-proven, silicon-gate manufacturing process. This Fast switching speeds c

Datasheet: MEM2402 , MEM4N60THDG , MEM4N60THG , MEM4N60K3G , MEM4N60A3G , MIC94052 , MIC94053 , TN0106 , IRFZ48N , TN0604 , TN0702 , TN2106K1-G , TN2106N3-G , TN2524 , TP2104K1 , TP2104N3 , TP2435 .

History: IPP120N08S4-03 | SIHF730S

Keywords - TN0110 MOSFET datasheet

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