All MOSFET. TN2106K1-G Datasheet

 

TN2106K1-G Datasheet and Replacement


   Type Designator: TN2106K1-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: SOT23
 

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TN2106K1-G Datasheet (PDF)

 8.1. Size:716K  supertex
 tn2106.pdf pdf_icon

TN2106K1-G

Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe

 9.1. Size:178K  ixys
 ixtn210p10t.pdf pdf_icon

TN2106K1-G

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M

Datasheet: MEM4N60K3G , MEM4N60A3G , MIC94052 , MIC94053 , TN0106 , TN0110 , TN0604 , TN0702 , RU7088R , TN2106N3-G , TN2524 , TP2104K1 , TP2104N3 , TP2435 , 2N7002KWA , 2SK3019A , BSS138A .

History: SVG108R5NAD | SUM90N06-4M4P | 2SK4146-S19-AY | UFZ24NL-TM3 | AOTL66515

Keywords - TN2106K1-G MOSFET datasheet

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