All MOSFET. TP2104K1 Datasheet

 

TP2104K1 Datasheet and Replacement


   Type Designator: TP2104K1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT23
 

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TP2104K1 Datasheet (PDF)

 8.1. Size:721K  supertex
 tp2104.pdf pdf_icon

TP2104K1

Supertex inc. TP2104P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well- Low power drive requirementproven, silicon-gate manufacturing process. This combination Ease of parallelingproduces a dev

 9.1. Size:687K  st
 stp210n75f6.pdf pdf_icon

TP2104K1

STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V

 9.2. Size:609K  st
 stp210nf02.pdf pdf_icon

TP2104K1

STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V

Datasheet: MIC94053 , TN0106 , TN0110 , TN0604 , TN0702 , TN2106K1-G , TN2106N3-G , TN2524 , IRLB3034 , TP2104N3 , TP2435 , 2N7002KWA , 2SK3019A , BSS138A , BSS138AKDW , BSS84A , BSS84KW .

History: AGM614D | TN2106K1-G | AGM614MBP

Keywords - TP2104K1 MOSFET datasheet

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