TP2104K1 Datasheet and Replacement
Type Designator: TP2104K1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT23
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TP2104K1 Datasheet (PDF)
tp2104.pdf

Supertex inc. TP2104P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well- Low power drive requirementproven, silicon-gate manufacturing process. This combination Ease of parallelingproduces a dev
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STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V
stp210nf02.pdf

STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SIHFP460 | BRD50N03 | FS30SM-5 | 2SK3353 | HY1606B | IRF6603 | APT904RAN
Keywords - TP2104K1 MOSFET datasheet
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History: SIHFP460 | BRD50N03 | FS30SM-5 | 2SK3353 | HY1606B | IRF6603 | APT904RAN



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