TP2435 MOSFET. Datasheet pdf. Equivalent
Type Designator: TP2435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 0.231 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20(max) nS
Cossⓘ - Output Capacitance: 70(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: SOT89
TP2435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TP2435 Datasheet (PDF)
tp2435.pdf
Supertex inc. TP2435P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold This low threshold enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven silicon-gate manufacturing process. This Low input capacitancecombination produces a device with the power handling
tp2435.pdf
TP2435P-Channel Enhancement-Mode Vertical DMOS FETFeatures General Description Low Threshold The TP2435 low-threshold Enhancement-mode(normally-off) transistor uses a vertical DMOS structure High Input Impedanceand a well-proven silicon gate manufacturing process. Low Input CapacitanceThis combination produces a device with the power Fast Switching Speedshandling
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100