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TP2435 Specs and Replacement

Type Designator: TP2435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.231 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 max nS

Cossⓘ - Output Capacitance: 70 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: SOT89

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TP2435 datasheet

 ..1. Size:617K  supertex
 tp2435.pdf pdf_icon

TP2435

Supertex inc. TP2435 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven silicon-gate manufacturing process. This Low input capacitance combination produces a device with the power handling ... See More ⇒

 ..2. Size:290K  microchip
 tp2435.pdf pdf_icon

TP2435

TP2435 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low Threshold The TP2435 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure High Input Impedance and a well-proven silicon gate manufacturing process. Low Input Capacitance This combination produces a device with the power Fast Switching Speeds handling... See More ⇒

Detailed specifications: TN0110, TN0604, TN0702, TN2106K1-G, TN2106N3-G, TN2524, TP2104K1, TP2104N3, IRFB7545, 2N7002KWA, 2SK3019A, BSS138A, BSS138AKDW, BSS84A, BSS84KW, MCAC10H03, MCAC16N03

Keywords - TP2435 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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