All MOSFET. STP32N06LFI Datasheet

 

STP32N06LFI Datasheet and Replacement


   Type Designator: STP32N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: ISOWATT220
 

 STP32N06LFI substitution

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STP32N06LFI Datasheet (PDF)

 5.1. Size:393K  st
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STP32N06LFI

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V

 6.1. Size:201K  st
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STP32N06LFI

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V

 7.1. Size:393K  st
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STP32N06LFI

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V

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Datasheet: STP2N80FI , STP30N05 , STP30N05FI , STP30N06 , STP30N06FI , STP32N05L , STP32N05LFI , STP32N06L , 2N60 , STP33N10 , STP33N10FI , STP36N05L , STP36N05LFI , STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI .

History: IRFE210

Keywords - STP32N06LFI MOSFET datasheet

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