MCAC40N10YA Datasheet and Replacement
Type Designator: MCAC40N10YA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21.4 nS
Cossⓘ - Output Capacitance: 259 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN5060
MCAC40N10YA substitution
MCAC40N10YA Datasheet (PDF)
mcac40n10ya.pdf

MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS
mcac40n10ya-tp.pdf

MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS
Datasheet: BSS138A , BSS138AKDW , BSS84A , BSS84KW , MCAC10H03 , MCAC16N03 , MCAC20N15 , MCAC30N06Y , BS170 , MCAC50N06Y , MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , MCB160N10Y , MCG04N10A , MCG10P03 .
History: SIR158DP | PSMN2R0-60PSR
Keywords - MCAC40N10YA MOSFET datasheet
MCAC40N10YA cross reference
MCAC40N10YA equivalent finder
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History: SIR158DP | PSMN2R0-60PSR



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