MCAC60N08Y Specs and Replacement
Type Designator: MCAC60N08Y
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 337 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: DFN5060
MCAC60N08Y substitution
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MCAC60N08Y datasheet
mcac60n08y.pdf
MCAC60N08Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 80 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=64V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2 ... See More ⇒
mcac60n08y-tp.pdf
MCAC60N08Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 80 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=64V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2 ... See More ⇒
Detailed specifications: BSS84KW, MCAC10H03, MCAC16N03, MCAC20N15, MCAC30N06Y, MCAC40N10YA, MCAC50N06Y, MCAC50N10Y, IRF740, MCAC75N02, MCAC80N045Y, MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, MCG20N08, MCG30N03
Keywords - MCAC60N08Y MOSFET specs
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History: 2SK4004-01MR | 30N50
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