All MOSFET. MCG16N15 Datasheet

 

MCG16N15 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCG16N15

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25.8 nC

Rise Time (tr): 19.7 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: DFN3333

MCG16N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCG16N15 Datasheet (PDF)

0.1. mcg16n15.pdf Size:1119K _mcc

MCG16N15 MCG16N15

MCG16N15Features Split Gate Trench MOSFET Technology Low Thermal Resistance Halogen Free. Green Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Te

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