All MOSFET. MCG16N15 Datasheet

 

MCG16N15 Datasheet and Replacement


   Type Designator: MCG16N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: DFN3333
 

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MCG16N15 Datasheet (PDF)

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MCG16N15

MCG16N15Features Split Gate Trench MOSFET Technology Low Thermal Resistance Halogen Free. Green Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Te

Datasheet: MCAC50N06Y , MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , MCB160N10Y , MCG04N10A , MCG10P03 , IRF640 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 , MCP07N65 , MCP20N70 .

History: SIHFIBC30G | GSM1024E

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