All MOSFET. MCMN2012 Datasheet

 

MCMN2012 Datasheet and Replacement


   Type Designator: MCMN2012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN2020-6J
 

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MCMN2012 Datasheet (PDF)

 ..1. Size:893K  mcc
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MCMN2012

MCMN2012Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHSCompliant. See ordering information) N-Channel MOSFETMaximum RatingsDFN2020-6J Operating Junction Temperature Range : -55oC to +150oC Storage

Datasheet: MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , IRF630 , MCP07N65 , MCP20N70 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B .

History: PSMN3R8-30LL | SI1958DH | AUIRFS6535 | HGB320N20S | TPCA8047-H | NCE70N1K4R | IRF6622

Keywords - MCMN2012 MOSFET datasheet

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