All MOSFET. MCMN2012 Datasheet

 

MCMN2012 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCMN2012
   Marking Code: N2012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32(max) nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN2020-6J

 MCMN2012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCMN2012 Datasheet (PDF)

 ..1. Size:893K  mcc
 mcmn2012.pdf

MCMN2012 MCMN2012

MCMN2012Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHSCompliant. See ordering information) N-Channel MOSFETMaximum RatingsDFN2020-6J Operating Junction Temperature Range : -55oC to +150oC Storage

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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