All MOSFET. MCMN2012 Datasheet


MCMN2012 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCMN2012

Marking Code: N2012

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32(max) nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 650 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: DFN2020-6J

MCMN2012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MCMN2012 Datasheet (PDF)

0.1. mcmn2012.pdf Size:893K _mcc


MCMN2012Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHSCompliant. See ordering information) N-Channel MOSFETMaximum RatingsDFN2020-6J Operating Junction Temperature Range : -55oC to +150oC Storage

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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