MCMN2012 PDF and Equivalents Search

 

MCMN2012 Specs and Replacement

Type Designator: MCMN2012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 650 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN2020-6J

MCMN2012 substitution

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MCMN2012 datasheet

 ..1. Size:893K  mcc
 mcmn2012.pdf pdf_icon

MCMN2012

MCMN2012 Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) N-Channel MOSFET Maximum Ratings DFN2020-6J Operating Junction Temperature Range -55oC to +150oC Storage ... See More ⇒

Detailed specifications: MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , IRF640N , MCP07N65 , MCP20N70 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B .

Keywords - MCMN2012 MOSFET specs

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