MCMN2012 Datasheet and Replacement
Type Designator: MCMN2012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN2020-6J
MCMN2012 substitution
MCMN2012 Datasheet (PDF)
mcmn2012.pdf
MCMN2012Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHSCompliant. See ordering information) N-Channel MOSFETMaximum RatingsDFN2020-6J Operating Junction Temperature Range : -55oC to +150oC Storage
Datasheet: MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , IRFP260N , MCP07N65 , MCP20N70 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B .
History: H5N2001LD | SM4831NAK | KMK1265F | AUIRFS3206 | SQ3426EV | BLF246B | 2N4857A
Keywords - MCMN2012 MOSFET datasheet
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History: H5N2001LD | SM4831NAK | KMK1265F | AUIRFS3206 | SQ3426EV | BLF246B | 2N4857A
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