MCP20N70 Datasheet and Replacement
Type Designator: MCP20N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 116 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO220AB
MCP20N70 substitution
MCP20N70 Datasheet (PDF)
mcp20n70.pdf

MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range: -55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance:
Datasheet: MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 , MCP07N65 , IRF3710 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B , MCQ4503A , MCQ4559 .
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