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MCP20N70 Spec and Replacement


   Type Designator: MCP20N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO220AB

 MCP20N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCP20N70 Specs

 ..1. Size:952K  mcc
mcp20n70.pdf pdf_icon

MCP20N70

MCP20N70 Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on) Qg N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150 C TO-220AB(H) Storage Temperature Range -55 C to +150 C Thermal Resistance ... See More ⇒

Detailed specifications: MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 , MCP07N65 , AO3400 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B , MCQ4503A , MCQ4559 .

Keywords - MCP20N70 MOSFET specs

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