MCQ03N06 Spec and Replacement
Type Designator: MCQ03N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 34 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: SOP8
MCQ03N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCQ03N06 Specs
mcq03n06.pdf
MCQ03N06 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Dual Compliant. See Ordering Information) Advanced Trench MOSFET Process Technology N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Power MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Maximum Ratings Operating Junction Temperatu... See More ⇒
Detailed specifications: MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 , MCP07N65 , MCP20N70 , MCPF07N65 , IRF3710 , MCQ15N10B , MCQ15N10Y , MCQ4407 , MCQ4407B , MCQ4503A , MCQ4559 , MCQ4953 , MCQ6005 .
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