All MOSFET. MCQ03N06 Datasheet

 

MCQ03N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCQ03N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 34 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: SOP8

MCQ03N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCQ03N06 Datasheet (PDF)

0.1. mcq03n06.pdf Size:944K _mcc

MCQ03N06
MCQ03N06

MCQ03N06Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Dual Compliant. See Ordering Information) Advanced Trench MOSFET Process TechnologyN-Channel Epoxy Meets UL 94 V-0 Flammability RatingPower MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Temperatu

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