MCU05N60A Datasheet and Replacement
Type Designator: MCU05N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90(max) nS
Cossⓘ - Output Capacitance: 72(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
MCU05N60A substitution
MCU05N60A Datasheet (PDF)
mcu05n60a.pdf
isc N-Channel MOSFET Transistor MCU05N60AFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: MCQ4559 , MCQ4953 , MCQ6005 , MCS2305B , MCT04N10 , MCT04N15 , MCT04P06 , MCT06P10 , K4145 , MCU09N20 , MCU12P10 , MCU18N20 , MCU18P10 , MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 .
History: UT2305G-AG3-R | SI4336DY | 2SK3352 | AP2422GY | PJS6833 | SVF4N65RD | SIHFIBE30G
Keywords - MCU05N60A MOSFET datasheet
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History: UT2305G-AG3-R | SI4336DY | 2SK3352 | AP2422GY | PJS6833 | SVF4N65RD | SIHFIBE30G
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