MCU40N10 PDF and Equivalents Search

 

MCU40N10 Specs and Replacement

Type Designator: MCU40N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

MCU40N10 substitution

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MCU40N10 datasheet

 ..1. Size:862K  mcc
 mcu40n10.pdf pdf_icon

MCU40N10

MCU40N10 Features High Density Cell Desihn for Ultra Low RDS(on) Ultra Low Gate Charge Low Reverse Transfer Capacitance Excellent Package for Good Heat Dissipation N-CHANNEL Fully Characterized Avalanche Voltage and Current MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix... See More ⇒

Detailed specifications: MCU12P10, MCU18N20, MCU18P10, MCU20N06, MCU20N06A, MCU20N06B, MCU20N15, MCU20P10, K4145, MCU60N04A, MCU80N06A, MSJAC11N65Y, MSJU11N65, SI1012, SI2101, SI2310A, SI2310B

Keywords - MCU40N10 MOSFET specs

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