All MOSFET. MCU40N10 Datasheet

 

MCU40N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCU40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252

 MCU40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCU40N10 Datasheet (PDF)

 ..1. Size:862K  mcc
 mcu40n10.pdf

MCU40N10 MCU40N10

MCU40N10Features High Density Cell Desihn for Ultra Low RDS(on) Ultra Low Gate Charge Low Reverse Transfer Capacitance Excellent Package for Good Heat DissipationN-CHANNEL Fully Characterized Avalanche Voltage and CurrentMOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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