All MOSFET. MCU40N10 Datasheet

 

MCU40N10 Datasheet and Replacement


   Type Designator: MCU40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
 

 MCU40N10 substitution

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MCU40N10 Datasheet (PDF)

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MCU40N10

MCU40N10Features High Density Cell Desihn for Ultra Low RDS(on) Ultra Low Gate Charge Low Reverse Transfer Capacitance Excellent Package for Good Heat DissipationN-CHANNEL Fully Characterized Avalanche Voltage and CurrentMOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix

Datasheet: MCU12P10 , MCU18N20 , MCU18P10 , MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , IRFB3607 , MCU60N04A , MCU80N06A , MSJAC11N65Y , MSJU11N65 , SI1012 , SI2101 , SI2310A , SI2310B .

History: SSW80R180S2 | AOSP21321 | AP2428GEY | TPB65R260M | SGSP462 | AP2531GY | ZXMN2F34MA

Keywords - MCU40N10 MOSFET datasheet

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