All MOSFET. MSJAC11N65Y Datasheet

 

MSJAC11N65Y Datasheet and Replacement


   Type Designator: MSJAC11N65Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DFN5060
 

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MSJAC11N65Y Datasheet (PDF)

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MSJAC11N65Y

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

 0.1. Size:908K  1
 msjac11n65y-tp.pdf pdf_icon

MSJAC11N65Y

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

Datasheet: MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , MCU40N10 , MCU60N04A , MCU80N06A , 4N60 , MSJU11N65 , SI1012 , SI2101 , SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW .

History: L2N7002DW1T1G | VSD013N10MS | IAUZ18N10S5L420 | RU4090L | IRF7453PBF | SL15N10A | TPCP8003-H

Keywords - MSJAC11N65Y MOSFET datasheet

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