All MOSFET. MSJU11N65 Datasheet

 

MSJU11N65 Datasheet and Replacement


   Type Designator: MSJU11N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

 MSJU11N65 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSJU11N65 Datasheet (PDF)

 ..1. Size:921K  mcc
 msju11n65.pdf pdf_icon

MSJU11N65

MSJU11N65Features Very Low FOM RDS(on) Qg Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Super-Junction Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum Ratings Operating Junction Temperature Ran

Datasheet: MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , MCU40N10 , MCU60N04A , MCU80N06A , MSJAC11N65Y , IRF4905 , SI1012 , SI2101 , SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW , SI3134KL3 .

History: SWD15N65J | TMW20N65HG | SM5A27NSFP | SWD13N60K2 | 2SK211

Keywords - MSJU11N65 MOSFET datasheet

 MSJU11N65 cross reference
 MSJU11N65 equivalent finder
 MSJU11N65 lookup
 MSJU11N65 substitution
 MSJU11N65 replacement

 

 
Back to Top

 


 
.