All MOSFET. MSJU11N65 Datasheet

 

MSJU11N65 Datasheet and Replacement


   Type Designator: MSJU11N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

 MSJU11N65 substitution

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MSJU11N65 Datasheet (PDF)

 ..1. Size:921K  mcc
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MSJU11N65

MSJU11N65Features Very Low FOM RDS(on) Qg Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Super-Junction Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum Ratings Operating Junction Temperature Ran

Datasheet: MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , MCU40N10 , MCU60N04A , MCU80N06A , MSJAC11N65Y , 4435 , SI1012 , SI2101 , SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW , SI3134KL3 .

History: CJB04N65 | NVBG060N090SC1 | CS1N80A4H | CEB18N5 | HAF1004S | MTP15N05LFI | 2SK3615

Keywords - MSJU11N65 MOSFET datasheet

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