MSJU11N65 PDF and Equivalents Search

 

MSJU11N65 Specs and Replacement

Type Designator: MSJU11N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

MSJU11N65 substitution

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MSJU11N65 datasheet

 ..1. Size:921K  mcc
 msju11n65.pdf pdf_icon

MSJU11N65

MSJU11N65 Features Very Low FOM RDS(on) Qg Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Super-Junction Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Ran... See More ⇒

Detailed specifications: MCU20N06A, MCU20N06B, MCU20N15, MCU20P10, MCU40N10, MCU60N04A, MCU80N06A, MSJAC11N65Y, 5N65, SI1012, SI2101, SI2310A, SI2310B, SI2312B, SI2324A, SI3134KDW, SI3134KL3

Keywords - MSJU11N65 MOSFET specs

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