All MOSFET. SIL03N10 Datasheet


SIL03N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: SIL03N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19.2 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: SOT23-6L

SIL03N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SIL03N10 Datasheet (PDF)

0.1. sil03n10.pdf Size:442K _mcc


SIL03N10Features High Density Cell Design for Low RDS(on) Trench Power HV MOSFET Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Opera

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