SIL03N10 Specs and Replacement
Type Designator: SIL03N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT23-6L
SIL03N10 substitution
SIL03N10 datasheet
sil03n10.pdf
SIL03N10 Features High Density Cell Design for Low RDS(on) Trench Power HV MOSFET Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Opera... See More ⇒
Detailed specifications: SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B , SI3420A , 5N60 , SIL05N06 , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 .
Keywords - SIL03N10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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