All MOSFET. SIL03N10 Datasheet

 

SIL03N10 Datasheet and Replacement


   Type Designator: SIL03N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23-6L
 

 SIL03N10 substitution

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SIL03N10 Datasheet (PDF)

 ..1. Size:442K  mcc
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SIL03N10

SIL03N10Features High Density Cell Design for Low RDS(on) Trench Power HV MOSFET Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Opera

Datasheet: SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B , SI3420A , 13N50 , SIL05N06 , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 .

History: IPB120N08S4-04 | IRFP460B

Keywords - SIL03N10 MOSFET datasheet

 SIL03N10 cross reference
 SIL03N10 equivalent finder
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