All MOSFET. SIL03N10 Datasheet

 

SIL03N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIL03N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.2 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23-6L

 SIL03N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIL03N10 Datasheet (PDF)

 ..1. Size:442K  mcc
 sil03n10.pdf

SIL03N10 SIL03N10

SIL03N10Features High Density Cell Design for Low RDS(on) Trench Power HV MOSFET Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Opera

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