SIL05N06 Specs and Replacement
Type Designator: SIL05N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23-6L
SIL05N06 substitution
- MOSFET ⓘ Cross-Reference Search
SIL05N06 datasheet
sil05n06.pdf
SIL05N06 Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Rang... See More ⇒
Detailed specifications: SI3400A, SI3401A, SI3402, SI3407, SI3415A, SI3415B, SI3420A, SIL03N10, RFP50N06, SIL2300, SIL2301, SIL2308, SIL2322A, SIL2623, SIL3400A, SIL3415, SIL3439K
Keywords - SIL05N06 MOSFET specs
SIL05N06 cross reference
SIL05N06 equivalent finder
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SIL05N06 substitution
SIL05N06 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WSF3036A | WSD3042DN56 | WSF3036 | WSD3028DN | WSC60N03
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