All MOSFET. SIL05N06 Datasheet

 

SIL05N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIL05N06
   Marking Code: 5N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23-6L

 SIL05N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIL05N06 Datasheet (PDF)

 ..1. Size:734K  mcc
 sil05n06.pdf

SIL05N06 SIL05N06

SIL05N06Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum RatingsOperating Junction Temperature Rang

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History: 2SJ151

 

 
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