SIL05N06 Datasheet and Replacement
Type Designator: SIL05N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23-6L
SIL05N06 substitution
SIL05N06 Datasheet (PDF)
sil05n06.pdf

SIL05N06Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum RatingsOperating Junction Temperature Rang
Datasheet: SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B , SI3420A , SIL03N10 , SKD502T , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 , SIL3439K .
History: PHD87N03LT | NCEP0107AR | SL90N20P | BSZ100N06LS3G | NTTFS010N10MCL | GSM4946 | IXTM12N50
Keywords - SIL05N06 MOSFET datasheet
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History: PHD87N03LT | NCEP0107AR | SL90N20P | BSZ100N06LS3G | NTTFS010N10MCL | GSM4946 | IXTM12N50



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