All MOSFET. SIL05N06 Datasheet

 

SIL05N06 Datasheet and Replacement


   Type Designator: SIL05N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23-6L
 

 SIL05N06 substitution

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SIL05N06 Datasheet (PDF)

 ..1. Size:734K  mcc
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SIL05N06

SIL05N06Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum RatingsOperating Junction Temperature Rang

Datasheet: SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B , SI3420A , SIL03N10 , IRF2807 , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 , SIL3439K .

History: TK35A65W5 | 2SK3432 | 4N70KL-TF1-T | IRF542FI | FQB47P06 | SSM3K04FV | JMTC068N07A

Keywords - SIL05N06 MOSFET datasheet

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