All MOSFET. P1025HDB Datasheet


P1025HDB MOSFET. Datasheet pdf. Equivalent

Type Designator: P1025HDB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 64 pF

Maximum Drain-Source On-State Resistance (Rds): 0.46 Ohm

Package: TO252

P1025HDB Transistor Equivalent Substitute - MOSFET Cross-Reference Search


P1025HDB Datasheet (PDF)

0.1. p1025hdb.pdf Size:188K _niko-sem


P1025HDBN-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 460m 10A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 250 VGate-Source Voltage VGS 20 VTC = 25

9.1. php1025 1.pdf Size:51K _philips


DISCRETE SEMICONDUCTORSDATA SHEETPHP1025P-channel enhancement modeMOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationP-channel enhancement modePHP1025MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low thresholdPIN SYMBOL DESCRIPTION High-speed switching1 s

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