P1025HDB Datasheet. Specs and Replacement
Type Designator: P1025HDB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 64 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO252
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P1025HDB substitution
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P1025HDB datasheet
p1025hdb.pdf
P1025HDB N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 460m 10A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS 20 V TC = 25 ... See More ⇒
php1025 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Objective specification P-channel enhancement mode PHP1025 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low threshold PIN SYMBOL DESCRIPTION High-speed switching 1 s ... See More ⇒
sup10250e.pdf
SUP10250E www.vishay.com Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM 0.0315 at VGS = 10 V 63 250 57.6 nC Maximum 175 C junction temperature 0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization TO-2... See More ⇒
Detailed specifications: SIL2301, SIL2308, SIL2322A, SIL2623, SIL3400A, SIL3415, SIL3439K, SIL3724, 8N60, P1825HDB, PA910BD, PK501BA, PK537BA, PK650DY, PKCH2BB, BSS123LT1G, BVSS123LT1G
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