P1025HDB Datasheet and Replacement. Cross Reference Search

P1025HDB Datasheet (PDF)

..1. Size:188K niko-sem
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P1025HDBN-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 460m 10A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 250 VGate-Source Voltage VGS 20 VTC = 25

9.1. Size:51K philips
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DISCRETE SEMICONDUCTORSDATA SHEETPHP1025P-channel enhancement modeMOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationP-channel enhancement modePHP1025MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low thresholdPIN SYMBOL DESCRIPTION High-speed switching1 s

9.2. Size:165K vishay
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SUP10250Ewww.vishay.comVishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM0.0315 at VGS = 10 V 63250 57.6 nC Maximum 175 C junction temperature0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization:TO-2

Datasheet: SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 , SIL3439K , SIL3724 , K2611 , P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G .