P1025HDBN-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 460m 10A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 250 VGate-Source Voltage VGS 20 VTC = 25

DISCRETE SEMICONDUCTORSDATA SHEETPHP1025P-channel enhancement modeMOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationP-channel enhancement modePHP1025MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low thresholdPIN SYMBOL DESCRIPTION High-speed switching1 s

SUP10250Ewww.vishay.comVishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM0.0315 at VGS = 10 V 63250 57.6 nC Maximum 175 C junction temperature0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization:TO-2