All MOSFET. STP38N06 Datasheet

 

STP38N06 Datasheet and Replacement


   Type Designator: STP38N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220
 

 STP38N06 substitution

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STP38N06 Datasheet (PDF)

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 stp38n06.pdf pdf_icon

STP38N06

STP38N06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP38N06 60 V

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 stb38n65m5 stf38n65m5 stp38n65m5 stw38n65m5.pdf pdf_icon

STP38N06

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5

 8.2. Size:1667K  st
 stb38n65m5 stp38n65m5 stw38n65m5.pdf pdf_icon

STP38N06

STB38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 2Order codes ID3TJmax max1STB38N65M5D2PAKSTP38N65M5 710 V 0.095 30 ATABSTW38N65M5 Higher VDSS rating and high dv/dt capability33 Excellent switching performance

Datasheet: STP33N10 , STP33N10FI , STP36N05L , STP36N05LFI , STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI , RU6888R , STP3N100 , STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , STP3N80XI , STP3N90 .

Keywords - STP38N06 MOSFET datasheet

 STP38N06 cross reference
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