All MOSFET. PK650DY Datasheet

 

PK650DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: PK650DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PDFN5X6P

 PK650DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK650DY Datasheet (PDF)

 ..1. Size:575K  1
 pk650dy.pdf

PK650DY PK650DY

Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch

 ..2. Size:575K  niko-sem
 pk650dy.pdf

PK650DY PK650DY

Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch

 9.1. Size:730K  unikc
 pk650ba.pdf

PK650DY PK650DY

PK650BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.3m @VGS = 10V30V 70APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C70IDContinuous Drain Current2TC = 100 C44.6IDM100Pulsed Drain Cur

 9.2. Size:225K  niko-sem
 pk650ba.pdf

PK650DY PK650DY

PK650BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 3.3m 70A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Vol

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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