All MOSFET. EFC2J013NUZ Datasheet

 

EFC2J013NUZ Datasheet and Replacement


   Type Designator: EFC2J013NUZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: WLCSP6
 

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EFC2J013NUZ Datasheet (PDF)

 ..1. Size:127K  onsemi
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EFC2J013NUZ

EFC2J013NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 5.8 mW, 17 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 5.8 mW @ 4.5 V 17 AFeatures6.2 mW @

 8.1. Size:246K  onsemi
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EFC2J013NUZ

EFC2J004NUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 m, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 7.1 m @ 4.5 V Features 7.7 m

Datasheet: PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , IRF1405 , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R .

History: QM3008D | APT6029BLL | APT38N60BC6 | AM30N03-40D | STU35N10 | IPT210N25NFD | IRFS9522

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