All MOSFET. EFC2J013NUZ Datasheet

 

EFC2J013NUZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: EFC2J013NUZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26000 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: WLCSP6

 EFC2J013NUZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EFC2J013NUZ Datasheet (PDF)

 ..1. Size:127K  onsemi
 efc2j013nuz.pdf

EFC2J013NUZ EFC2J013NUZ

EFC2J013NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 5.8 mW, 17 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 5.8 mW @ 4.5 V 17 AFeatures6.2 mW @

 8.1. Size:246K  onsemi
 efc2j004nuz.pdf

EFC2J013NUZ EFC2J013NUZ

EFC2J004NUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 m, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 7.1 m @ 4.5 V Features 7.7 m

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SIHFI9530G

 

 
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