EFC3C001NUZ PDF and Equivalents Search

 

EFC3C001NUZ Specs and Replacement

Type Designator: EFC3C001NUZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 350 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: WLCSP4

EFC3C001NUZ substitution

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EFC3C001NUZ datasheet

 ..1. Size:267K  onsemi
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EFC3C001NUZ

EFC3C001NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20V, 30m , 6A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS RSS(on) Max IS Max Features 30m @ 4.5V 2.5V dri... See More ⇒

Detailed specifications: PKCH2BB, BSS123LT1G, BVSS123LT1G, EFC2J004NUZ, EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, AON7403, EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, FCB125N65S3, FCB260N65S3

Keywords - EFC3C001NUZ MOSFET specs

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