All MOSFET. EFC3C001NUZ Datasheet

 

EFC3C001NUZ Datasheet and Replacement


   Type Designator: EFC3C001NUZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 350 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: WLCSP4
      - MOSFET Cross-Reference Search

 

EFC3C001NUZ Datasheet (PDF)

 ..1. Size:267K  onsemi
 efc3c001nuz.pdf pdf_icon

EFC3C001NUZ

EFC3C001NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20V, 30m, 6A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS RSS(on) Max IS Max Features 30m@ 4.5V 2.5V dri

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM2311A | IPI47N10S-33 | SVD2N60T | IXFN140N20P | IRFZ48RS | 2SK2094 | WSD30L30DN

Keywords - EFC3C001NUZ MOSFET datasheet

 EFC3C001NUZ cross reference
 EFC3C001NUZ equivalent finder
 EFC3C001NUZ lookup
 EFC3C001NUZ substitution
 EFC3C001NUZ replacement

 

 
Back to Top

 


 
.