All MOSFET. EFC3C001NUZ Datasheet

 

EFC3C001NUZ Datasheet and Replacement


   Type Designator: EFC3C001NUZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 350 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: WLCSP4
 

 EFC3C001NUZ substitution

   - MOSFET ⓘ Cross-Reference Search

 

EFC3C001NUZ Datasheet (PDF)

 ..1. Size:267K  onsemi
 efc3c001nuz.pdf pdf_icon

EFC3C001NUZ

EFC3C001NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20V, 30m, 6A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS RSS(on) Max IS Max Features 30m@ 4.5V 2.5V dri

Datasheet: PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , HY1906P , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 .

History: JCS4N60CB | STU466S

Keywords - EFC3C001NUZ MOSFET datasheet

 EFC3C001NUZ cross reference
 EFC3C001NUZ equivalent finder
 EFC3C001NUZ lookup
 EFC3C001NUZ substitution
 EFC3C001NUZ replacement

 

 
Back to Top

 


 
.