All MOSFET. EFC3C001NUZ Datasheet

 

EFC3C001NUZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: EFC3C001NUZ
   Marking Code: WC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 350 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: WLCSP4

 EFC3C001NUZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EFC3C001NUZ Datasheet (PDF)

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 efc3c001nuz.pdf

EFC3C001NUZ EFC3C001NUZ

EFC3C001NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20V, 30m, 6A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. VSSS RSS(on) Max IS Max Features 30m@ 4.5V 2.5V dri

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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