All MOSFET. EFC4C002NL Datasheet

 

EFC4C002NL Datasheet and Replacement


   Type Designator: EFC4C002NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 750 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: WLCSP8
 

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EFC4C002NL Datasheet (PDF)

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EFC4C002NL

MOSFET Power,Dual, N-Channel, for 3-CellsLithium-ion Battery Protection,WLCSP830 V, 2.6 mW, 30 Awww.onsemi.comEFC4C002NLThis N-Channel Power MOSFET is produced usingVSSS RSS(on) Max IS MaxON Semiconductors trench technology, which is specifically2.6 mW @ 10 Vdesigned to minimize gate charge and ultra low on resistance.30 V 3.3 mW @ 8 V 30 AThis device is suitabl

Datasheet: BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , IRF9640 , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 .

History: FTK2N65P

Keywords - EFC4C002NL MOSFET datasheet

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