EFC4C002NL PDF and Equivalents Search

 

EFC4C002NL Specs and Replacement

Type Designator: EFC4C002NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 750 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: WLCSP8

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EFC4C002NL datasheet

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EFC4C002NL

MOSFET Power, Dual, N-Channel, for 3-Cells Lithium-ion Battery Protection, WLCSP8 30 V, 2.6 mW, 30 A www.onsemi.com EFC4C002NL This N-Channel Power MOSFET is produced using VSSS RSS(on) Max IS Max ON Semiconductor s trench technology, which is specifically 2.6 mW @ 10 V designed to minimize gate charge and ultra low on resistance. 30 V 3.3 mW @ 8 V 30 A This device is suitabl... See More ⇒

Detailed specifications: BSS123LT1G, BVSS123LT1G, EFC2J004NUZ, EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, K2611, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, FCB125N65S3, FCB260N65S3, FCD360N65S3R0

Keywords - EFC4C002NL MOSFET specs

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