All MOSFET. EFC4C002NL Datasheet

 

EFC4C002NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: EFC4C002NL
   Marking Code: 4C2_NP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 750 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: WLCSP8

 EFC4C002NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EFC4C002NL Datasheet (PDF)

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 efc4c002nl.pdf

EFC4C002NL EFC4C002NL

MOSFET Power,Dual, N-Channel, for 3-CellsLithium-ion Battery Protection,WLCSP830 V, 2.6 mW, 30 Awww.onsemi.comEFC4C002NLThis N-Channel Power MOSFET is produced usingVSSS RSS(on) Max IS MaxON Semiconductors trench technology, which is specifically2.6 mW @ 10 Vdesigned to minimize gate charge and ultra low on resistance.30 V 3.3 mW @ 8 V 30 AThis device is suitabl

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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