EFC4K110NUZ Datasheet and Replacement
Type Designator: EFC4K110NUZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1600 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00295 Ohm
Package: WLCSP10
EFC4K110NUZ substitution
EFC4K110NUZ Datasheet (PDF)
efc4k110nuz.pdf

EFC4K110NUZMOSFET Power, Dual,N-Channel, for 1-2 CellsLithium-ion Battery Protection24 V, 2.95 mW, 25 Awww.onsemi.comIntroductionThis Power MOSFET features a low on-state resistance. This deviceVSSS RSS(ON) MAX IS MAXis suitable for applications such as power switches of portable24 V 2.95 mW @ 4.5 V 25 Amachines. Best suited for 1-2 cells lithium-ion battery applicatio
efc4k105nuz.pdf

EFC4K105NUZPower MOSFETfor 12 Cells LithiumionBattery Protection22 V, 3.55 mW, 25 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-2 cells lithium-ion battery applications.22 V 3.55 mW @ 4.5 V 25 AFeatures3
Datasheet: EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , MMD60R360PRH , EFC8811R , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 .
History: AUIRLR3705Z | GSM3432
Keywords - EFC4K110NUZ MOSFET datasheet
EFC4K110NUZ cross reference
EFC4K110NUZ equivalent finder
EFC4K110NUZ lookup
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EFC4K110NUZ replacement
History: AUIRLR3705Z | GSM3432



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