All MOSFET. EFC4K110NUZ Datasheet

 

EFC4K110NUZ Datasheet and Replacement


   Type Designator: EFC4K110NUZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1600 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00295 Ohm
   Package: WLCSP10
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EFC4K110NUZ Datasheet (PDF)

 ..1. Size:187K  onsemi
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EFC4K110NUZ

EFC4K110NUZMOSFET Power, Dual,N-Channel, for 1-2 CellsLithium-ion Battery Protection24 V, 2.95 mW, 25 Awww.onsemi.comIntroductionThis Power MOSFET features a low on-state resistance. This deviceVSSS RSS(ON) MAX IS MAXis suitable for applications such as power switches of portable24 V 2.95 mW @ 4.5 V 25 Amachines. Best suited for 1-2 cells lithium-ion battery applicatio

 8.1. Size:169K  onsemi
 efc4k105nuz.pdf pdf_icon

EFC4K110NUZ

EFC4K105NUZPower MOSFETfor 12 Cells LithiumionBattery Protection22 V, 3.55 mW, 25 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-2 cells lithium-ion battery applications.22 V 3.55 mW @ 4.5 V 25 AFeatures3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3150L | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | WSD3095DN56 | GSM3050S

Keywords - EFC4K110NUZ MOSFET datasheet

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